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MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM55RZ/EZ-M,-H
* IT (AV) * IF (AV) * VRRM * * * *
Average on-state current ............ 55A Average forward current ............ 55A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5 80 A1K2 K1 A2 2-6.5 (RZ)
12.5
26
A1K2
CR
K1 SR
A2 K1 G1
K1 G1
17.5
20
20
3-M5
(EZ) Tab#110, t=0.5 A1 CR K1K2 SR A2 K1 G1
9 6.5
LABEL
21
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V
Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso
Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5
Conditions
Ratings 86
Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g
Single-phase, half-wave 180 conduction, TC=86C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C
55 1100 5.0 x 103 100 5.0 0.5 10 5.0 2.0 -40~125 -40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=165A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 10 10 1.35 -- 3.0 -- 100 0.5 0.2 -- Unit mA mA V V/s V V mA C/ W C/ W M
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt
Item Thyristor Diode
PGM
PG (AV)
VFGM
IFGM
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 1200 Tj=125C SURGE (NON-REPETITIVE) CURRENT (A) 1000 RATED SURGE (NON-REPETITIVE) CURRENT
800
600
400
0.8
1.2
1.6
2.0
2.4
200
1
23
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V)
VFGM=10V PGM=5W IFGM=2.0A
TRANSIENT THERMAL IMPEDANCE (C/W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)
7 5 VGT=3.0V PG(AV)= 3 0.50W 2 0 IGT= 10 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 80 AVERAGE POWER DISSIPATION (W) 70 60 50 40 30 20 10 0 0 10 20 30 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130
180 120 60 =30 90 CASE TEMPERATURE (C)
120 110 100 90 80 70 60 50 0 10 20 30 40 50
360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
=30 60 90 120 180
40
50
60
70
80
60
70
80
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
100 AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) DC 270 CASE TEMPERATURE (C)
LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 110 100 90 80 70 60 100 50 0 =30 60 90 180 270 DC 120 20 40 60 80 100 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
80 180 120 90 60 =30
60
40 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
20
0
0
20
40
60
80
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 160 AVERAGE POWER DISSIPATION (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE
LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 125 CASE TEMPERATURE (C) 120 115 110 105 100 95 90 85 80 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE
=180
90 60 30
=30 60 90 180 80 100 120 140 160
0
20
40
60
RMS CURRENT (A)
RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 160 140 POWER DISSIPATION (W) (PER SINGLE MODULE) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 =30 60 360
RESISTIVE, INDUCTIVE LOAD
LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 125 CASE TEMPERATURE (C) (PER SINGLE MODULE) 120 115 110 105 100 95 90 85 80 0 =30 60 90 120 20 40 60 180 360
RESISTIVE, INDUCTIVE LOAD
120 180 90
80 100 120 140 160
DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 160 140 120 100 80 60 40 20 0 0 20 40 60 360
RESISTIVE, INDUCTIVE LOAD
DC OUTPUT CURRENT (A) (PER TWO MODULES) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 120 CASE TEMPERATURE (C) (PER SINGLE MODULE) 360
RESISTIVE, INDUCTIVE LOAD
POWER DISSIPATION (W) (PER SINGLE MODULE)
90 60 =30 120
110 100 90 80 70 60 50 0 20 40 60 =30 60
90 120
80 100 120 140 160
80 100 120 140 160
DC OUTPUT CURRENT (A) (PER THREE MODULES)
DC OUTPUT CURRENT (A) (PER THREE MODULES)
Feb.1999

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